Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete .

The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state resistance, provide superi.

SSE04N60SL

SSE04N65SL

SSE07N80SL

SSE08N60SL

SSE102N10SV-C

SSE104N10-C

SSE105P03-C

SSE110N03-03P

SSE12N65SL

SSE133N12S-C

SSE14N65H-C

SSE16020

SSE166N10SV-C

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